BLW60C ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 50 mA 36 V BVCEO IC = 100 mA 16 BVEBO IE = 25 mA 4.0 V ICES VCE = 15 V 25 mA hFE VCE = 5.0 V IC = 4.0 A 10 80 --- CC VCB = 15 V f = 1.0 MHz 160 pF GP ηC VCC = 12.5 V P OUT = 45 W f = 175 MHz 5.0 dB NPN SILICON RF POWER TRANSISTOR BLW60C DESCRIPTION: The ASI BLW60C is Designed for
12.5 V High Band Applications up to
175 MHz. FEATURES:
- Common Emitter
- PG = 5.0 dB at 45 W/175 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCESM 36 V VCEO 16 V VEBO 4.0 V PDISS 100 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.75 °C/W PACKAGE STYLE .380 4L STUD MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B EE