BLW31 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 2.0 mA hFE VCE = 5.0 V IC = 200 mA 35 --- --- COB VCB = 28 V f = 1.0 MHz 250 pF PG ηC VCC = 28 V POUT = 25 W f = 175 MHz 8.5 dB NPN SILICON RF POWER TRANSISTOR BLW31 DESCRIPTION: The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability FEATURES:

  • Common Emitter-Class-C
  • PG = 10 dB at 30 W/150 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCBO 36 V VCEO 18 V VEBO 4.0 V PDISS 40 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 4.4 °C/W PACKAGE STYLE .380 4L STUD MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A C B E E