BLV99 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0mA 45 V BVCER IC = 10 mA R BE = 10 Ω 45 V BVEBO IE = 1.0 mA 3.5 V ICBO VEB = 5.0 V 1.0 mA hFE VCE = 5 V I C = 100 mA 20 --- COB VCB = 24 V f = 1.0 MHz 3.5 pF PG VCE = 20 V I C = 150 mA f = 860 MHz 12 dB IMD1 VCE = 20 V I C = 150 mA f = 860 MHz Pout = 0.5 W -58 dBc PACKAGE STYLE 205 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE NPN SILICON RF POWER TRANSISTOR BLV99 DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE:

  • ••• Gold Metallization
  • ••• Emitter Ballasting
  • ••• High Gain MAXIMUM RATINGS IC 300 mA VCBO 45 V VCEO 25 V VEBO 3.5 V PDISS 5.3 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °Cto +150 °C θθθθJC 33 °C/W