BLV859 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 30 mA 60 V BVCEO IC = 60 mA 28 V BVEBO IE = 1.2 mA 2.5 V ICBO VCB = 27 V 3.0 mA ICEO VCE = 20 V 6.0 mA hFE VCE = 25 V IC = 2.25 A 30 140 --- COB VCB = 26 V f = 1.0 MHz 75 pF PG IMD1 VCC = 25 V ICQ = 2 X 2.25 A f = 860 MHz POUT = 20 W -54 dB dBc VSRW VCC = 25 V ICQ = 2 X 2.25 A POUT = 20 W PEP VSWR = 50:1 @ all phase angles No Degradation in Output Power NPN SILICON RF POWER TRANSISTOR BLV859 DESCRIPTION: The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz. FEATURES:

  • Common Emitter
  • PG = 10 dB at 150 W/860 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 15 A VCEO 28 V VCBO 60 V VEBO 2.5 V PDISS 145 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.20 °C/W PACKAGE STYLE .400 BAL FLG(C) MINIMUM inches / mm .380 / 9.65 .120 / 3.05 .780 / 19.81 B C D E F G A MAXIMUM .130 / 3.30 .820 / 20.83 .390 / 9.91 inches / mm 1.090 / 27.69 H DIM K L I J .003 / 0.08 .060 / 1.52 .007 / 0.18 .070 / 1.78 .205 / 5.21 N M .850 / 21.59 .870 / 22.10 .435 / 11.05 .407 / 10.34.395 / 10.03 .080x45° A B F G H I J K L M (4X).060 R .1925 D C E FULL R N 1.335 / 33.91 1.345 / 34.16 .210 / 5.33