BLV59 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 25 V BVCES IC = 50 mA 50 V BVEBO IE = 20 mA 4.0 5.0 V hFE VCE = 5.0 V I C = 1.0A 20 100 --- COB VCB = 28 V f = 1.0 MHz 50 pF PG VCE = 25 V I CQ = 60 mA POUT = 30.0 W 8.0 9.0 dB IMD3 Vision = -8.0 dB Sound = -10 dB Chroma = -16 dB -48 dBc PG VCE = 25 V I CQ = 1.6 A POUT = 15 W 9 10 dB IMD3 Vision = -8.0 dB Sound = -10 dB Chroma = -16 dB -60 dBc NPN SILICON RF POWER TRANSISTOR ASI BLV59 DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE:

  • Gold Metalization
  • Intrnal Matching
  • Emitter Ballasting MAXIMUM RATINGS IC 10 A VCB 50 V PDISS 80 W @ TC = 25 O C TJ -55 O C to +200 O C TSTG -55 O C to +150 O C θθθθJC 2.2 O C/W PACKAGE STYLE .230 6FLG. 1, 3, 4 & 6 = EMITTER 2 = BASE 5 = COLLECTOR