BLV33 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3
Specifications are subject to change without notice. CHARACTERISTICS TC = 25°C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 33 V BVCES IC = 25 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 30 V 10 mA hFE VCE = 25 V IC = 3.0 A 15 100 --- Cc Cre Ccs VCB = 25 V f = 1.0 MHz VCE = 25 V I C = 100 mA f = 1.0 MHz VCE = 25 V I C = 100 mA f = 1.0 MHz 155 3.0 pF fT VCB = 25 V IE = 3.0 A VCB = 25 V IE = 6.0 A 680 750 MHz GP VCE = 25 V IC = 3.2 A Pout = 19 W f = 224.25 MHz 9.0 9.7 --- NPN SILICON RF POWER TRANSISTOR BLV33 DESCRIPTION: The ASI BLV33 is a Common Emitter Device Designed for Class A Television Applications. FEATURES INCLUDE:
- Gold Metalization
- Emitter Ballasting MAXIMUM RATINGS IC 12.5 A VCESM 65 V VCEO 33 V PDISS 132 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.5 °C/W PACKAGE STYLE .500 4L STUD 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE ORDER CODE: ASI10498
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/3
LERROR! REFERENCE SOURCE NOT FOUND. BLV33 Specifications are subject to change without notice. Fig. 1 Intermodulation distortion (dim) and power gain as a function of output power. Fig. 2 Cross-modulation distortion (d cm) as a function of output power. Conditions for fig. 1 and 2: Typical values; V CE = 25 V; IC = 3.2 A; Th = 25°C – Th = 70°C; fvision = 224.25 MHz.
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 3/3
LERROR! REFERENCE SOURCE NOT FOUND. BLV33 Specifications are subject to change without notice. Fig. 3 VCE = 28 V; IC(ZS) = 100 mA; Th = 70 °C; fvision = 224.25 MHz. Fig. 4 V CE = 28 V; IC(ZS) = 100 mA; Th = 70 °C; fvision = 224.25 MHz; typical values.