BLV20 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 2.0 mA 65 V BVCEO IC = 10 mA 35 V BVEBO IE = 1.0 mA 4.0 V ICBO VCB = 36 V 1.0 mA hFE VCE = 5.0 V IC = 400 mA 10 100 --- CC VCB = 28 V f = 1.0 MHz 10 pF PG ηηηηC VCC = 28 V P OUT = 8.0 W f = 175 MHz 12 dB NPN SILICON RF POWER TRANSISTOR BLV20 DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES:

  • Common Emitter
  • PG = 12 dB at 8.0 W/175 MHz
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VCES 65 V VEBO 4.0 V PDISS 20 W @ TC = 25 ° C TJ -65 °C to +200 °C TSTG -65 °C to +150°C θθθθJC 8.75 °C/W PACKAGE STYLE .380 4L FLG MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 C B E E