BLF861A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 1.5 mA 65 V IDSS VDS = 32 V V GS = 0 V 2.2 µA IDSX VDS = 10 V V GS = VGSth + 9 V 18 A IGSS VDS = 0 V V GS = ±15 V 25 nA VGS(th) ID = 150 mA V DS = 10 V 4.0 5.5 V RDS(on) ID = 4.0 A V GS = VGSth + 9 V 160 mΩΩΩΩ gfs ID = 4.0 A V DS = 10 V 4.0 S Ciss Coss Crss VDS = 32 V V GS = 0 V f = 1.0 MHz 6.0 pF Gp ηηηηD VDS = 32 V P out = 150 W f = 860 MHz 13.5 14.5 dB UHF POWER LDMOS TRANSISTOR PACKAGE STYLE .385X.850 4LFG 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE DESCRIPTION: The ASI BLF861A ia a Silicon N- channel enhancement mode lateral D- MOS push-pull transistor. FEATURES:
- Internal input-output matching
- Omnigold™ Metalization System MAXIMUM RATINGS ID 18 A VDS 65 V VGS ±15 V PDISS 318 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.55 °C/W BLF861A