BLF378 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 40 mA VGS = 0 V 125 V IDSS VDS = 50 V V GS = 0 V 5.0 mA IGSS VDS = 0 V V GS = 30 V 1.0 µµµµA VGS VGS = VDS I DS = 300 mA 1.0 7.0 V gM VDS = 10 V VGS = 5.0 V 5.5 Mho RDSON VGS = 20 V IDS = 6.0 A 0.30 ΩΩΩΩ IDSAT VGS = 20 V VDS = 10 V 35 A Ciss Coss Crss VDS = 50 V V GS = 0 V f = 1.0 MHz 400 200 pF PGS ηηηη ψψψψ VDS = 50 V I DQ = 0.8 A f = 225 MHz 20:1 dB --- POWER MOSFET N-Channel Enhancement Mode BLF378 PACKAGE STYLE .400 BAL FLG(D) 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE DESCRIPTION: The ASI BLF378 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for broadband RF Applications up to 225 MHz. FEATURES INCLUDE: PG = 14 dB Min. at 225 MHz 20:1 Load VSWR Capability Omnigold™ metalization system MAXIMUM RATINGS ID 18 A VDSS 125 V VGS 20 V PDISS 500 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 0.35 °C/W