BLF246 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 50 mA 65 V IDSS VDS = 28 V V GS = 0 V 2.5 mA IGSS VDS = 0 V V GS = ±20 V 1.0 µµµµA VGS(th) VDS = 10 V I D = 50 mA 2.0 4.5 V gfs VDS = 10 V ID = 2.5 A 3.0 4.2 S RDS(on) VGS = 10 V ID = 5.0 A 0.2 0.3 ΩΩΩΩ Cis Cos Crs VDS = 28 V V GS = 0 V f = 1.0 MHz 225 180 pF PG ηηηηD VDS = 28 V Pout = 80 W f = 108 MHz IDQ = 0.1 A dB VHF POWER MOSFET N-Channel Enhancement Mode BLF246 PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3&4 = SOURCE DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PG = 13 dB Typical at 175 MHz 30:1 Load VSWR Capability Omnigold™ metalization system MAXIMUM RATINGS ID 13 A VDS 65 V VGS ± 20 V PDISS 130 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C θθθθJC 1.35 °C/W