BLF245 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 10 mA 65 V IDSS VDS = 28 V V GS = 0 V 2.0 mA IGSS VDS = 0 V V GS = ±20 V 1.0 µµµµA VGS(th) VDS = 10 V I D = 10 mA 2.0 4.5 V gfs VDS = 10 V ID = 1.5 A 1.2 1.9 S Ciss Coss Crss VDS = 28 V V GS = 0 V f = 1.0 MHz 125 7.0 pF PG ηηηηD VDS = 28 V I DQ = 25 mA Pout = 30 W f = 150 MHz dB ψψψψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER RF POWER MOSFET N-Channel Enhancement Mode BLF245 PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3&4 = SOURCE DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PG = 13 dB Typical at 175 MHz 30:1 Load VSWR Capability Omnigold™ metalization system MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C θθθθJC 1.8 °C/W