BLD128DD FOSHAN | Alldatasheet

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R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 1 / 6 TO-252 塑封封装 NPN半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 耐压高,开关速度快,安全工作区宽,符合 ROHS 规范。 High voltage capability, high speed switching, wide SOA,ROHS compliant. Fluorescent lamp, electronics ballast, electronic transformer, switch mode power supply. PIN1：Base PIN 2 ：Collector PIN 3 ：Emitter PIN 4 ：VD 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 2 1

R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 700 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage V EBO 9 V Collector Current - Continuous I C 5 A Collector Power Dissipation P C 1.5 W Collector Power Dissipation PC(Tc=25℃) 50 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO IC=1mA I E=0 700 V Collector to Emitter Breakdown Voltage VCEO IC=10mA I B=0 400 V Emitter to Base Breakdown Voltage V EBO IE=1mA I C=0 9 V Collector Cut-Off Current I CBO V CB=700V I E=0 0.1 mA Collector cut-off current ICEO V CE=400V I B=0 0.1 mA Emitter Base Cut-Off Current I EBO V EB=9V I C=0 0.1 mA DC Current Gain hFE(1) V CE=5V I C=1A 10 40 hFE(2) V CE=5V I C=4A 5 hFE(3) V CE=5V I C=10mA 7 Collector to Base Breakdown Voltage VCE(sat)(1) IC=1A I B=0.2A 0.5 V VCE(sat)(2) IC=4A I B=1A 1.5 V Base to Emitter Saturation Voltage V BE(sat) IC=1A I B=0.2A 1.5 V Storage time t s VCE=5V I C=0.5A (UI9600) 1.5 5 μs Fall time t f 0.8 Transition Frequency f T VCE=10V I C=0.5A f=1MHZ 5 MHZ 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve S O A ( D C ) P C-TC h FE-Ic h FE-Ic Vces-IC Vbes-I C tS-Ta h FE-Ta

R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： 128DD： 为型号代码 Note: BR:   Company Code 128DD: Product Type. **:  Lot No. Code, code change with Lot No. BR ** 128DD

R e v . E M a y . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 TO-252 2,500 2 5,000 5 25,000 13〞×16 360×360×50 385×257×392 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-251/252 75 48 3,600 5 18,000 526×20.5×5.25 555×164×50 575×290×180 使用说明 / N o t i c e s