BJ011TG DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.doingter.cn — 1 — BJ011TG Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=100A,RDS(ON)<11mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- TC=50℃ 100 A Continuous Drain Current-TC=100℃ 70.7 Pulsed Drain Current 400 EAS Single Pulse Avalanche Energy5 mJ PD Power Dissipation 300 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.5 ℃/W Package Marking and Ordering Information： G D S 1216 A ll data sheet.com
www.doingter.cn — 2 — BJ011TG Part NO. Marking Package BJ011TG J011T TO-263 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2.5 --- 4.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=50A --- 10 11 mΩ GFS Forward Transconductance VDS=10V, ID=50A 70 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=100V, VGS=0V, f=1MHz --- 4200 5500 pF Coss Output Capacitance --- 333.1 Crss Reverse Transfer Capacitance --- 8.8 --- Switching Characteristics td(on) Turn-On Delay Time VDS=100V, ID=50A, RGEN=4.7Ω, VGS=10V --- 18 --- ns tr Rise Time --- 26 --- ns td(off) Turn-Off Delay Time --- 41 --- ns tf Fall Time --- 11 --- ns Qg Total Gate Charge VGS=10V, VDS=100V, ID=50A --- 63.2 --- nC Qgs Gate-Source Charge --- 24 --- nC Qgd Gate-Drain “Miller” Charge --- 16.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=10A --- --- 1.2 V --- --- 100 A --- 140 --- S trr I Diod e Forward Current Rever se Recovery Time --- TJ = 25°C, IF = 50 ns 450 A ll data sheet.com