BFX89 COMSET | Alldatasheet

Document overview

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Technical content

  • SILICON PLANAR EPITAXIAL TRANSISTORS
  • TO-72 METAL CASE
  • VERY LOW NOISE APPLICATIONS :
  • TELECOMMUNICATIONS
  • WIDE BAND UHF AMPLIFIER
  • RADIO COMMUNICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage ( IB = 0) 15 V VCER Collector-Emitter Voltage ( RBE ≤50Ω ) 30 V VCBO Collector-Base Voltage ( IE= 0) 30 V VEBO Collector-Base Voltage ( IC = 0) 2.5 V IC Collector Current 25 mA ICM Collector Peak Current 50 mA Ptot Total Power Dissipation at Tamb ≤ 25 °C 200 mW Tstg, Tj Storage and Junction Temperature -65 to 200 °C The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high f T, low reverse capacitance, excellent cross m odulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment. WIDE BAND VHF/UHF AMPLIFIER

Thermal Resistance, Junction – Case Max Thermal Resistance, Junction – ambient Max 580 880 °C/W °C/W

ELECTRICAL CHARACTERISTICS

Tamb = 25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Mx Unit ICBO Collector Cutoff Current (IE=0) VCB = 15V - - 10 nA VCEK* Collector-emitter Knee Voltage IC = 20mA - - 0.75 V BFX89 - 1 - VCE = 5V f = 500MHZ IC =2 mA BFY90 1 1.1 - BFX89 - 1.2 - fT Transition Frequency VCE = 5V f = 500MHZ IC =25 mA BFY90 1.3 1.4 - GHz BFX89 20 - 150 IC= 2mA VCE= 1 V BFY90 25 - 150 BFX89 20 - 125 hFE DC Current Gain IC= 25mA VCE= 1 V BFY90 25 - 125 BFX89 - - 1.7 CCBO(1) Collector-base Capacitance IE =0 VCB = 10V f= 1MHZ V CE= 5 BFY90 - - 1.5 pF BFX89 - 0.6 - Cre(2) Reverse Capacitance IC= 2mAV f = 1MHZ BFY90 - 0.6 0.8 pF

Symbol Ratings Test Condition(s) Min Typ Mx Unit IC= 2mA , VCE= 5 V f = 100KHz Rg = Optimized BFY90 Only - - 4 BFX89 - 3.3 4 IC= 2mA , VCE= 5 V f= 200 MHz Rg = Optimized BFY90 - 2.5 3.5 BFX89 - - 6.5 IC= 2mA , VCE= 5 V f = 500 MHz Rg = 50 Ω BFY90 - - 5 BFX89 - 7 - NF(2) Noise Figure IC= 2mA , VCE= 5 V f = 800 MHz Rg = Optimized BFY90 - 5.5 - dB f=200 MHz 19 22 - For BFX89 IC= 8mA VCE= 10 V f=800 MHz - 7 - f=200 MHz 21 23 - Gpe (2) Power Gain ( not neutralized) For BFY90 IC= 14mA VCE= 10 V f=800 MHz - 8 - dB (3) Channel 9 - 6 - For BFX89 IC=8mA VCE= 10 V Dim = -30 dB (4) Channel 62 - 6 (3) Channel 9 10 12 - Po Output Power For BFY90 IC=14mA VCE= 10 V Dim = -30 dB (4) Channel 62 - 12 - mW * IB = value for which IC =22 mA at VCE = 1V (1) Shield lead not grounded (3) f p = 202MHZ, fq = 205 MHZ, f(2q-p) = 208MHZ (2) Shield lead grounded (4) f p = 798MHZ, fq = 802 MHZ, f(2q-p) = 806MHZ

MECHANICAL DATA CASE TO-72 Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Pin 4 : Case