BFW16A COMSET | Alldatasheet
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09/11/2012 COMSET SEMICONDUCTORS 1 | 3 HF WIDEBAND TRANSISTORS The BFW16A is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.It is a ruggedized version of the BFW16, which it succeds. It is primarily intended for :
- Final and driver stages of channel and band aerial amplifiers with high outpout power for bands I , II , III , IV , V (40-860 MHz).
- Final stage of the wideband vertical amplifier in high speed oscilloscopes. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage I B = 0 25 V VCBOM Collector-Base Voltage (open emitter ; peak value) IE = 0 40 V VEBO Emitter-Base Voltage I C = 0 2 V VCERM Collector-Emitter Voltage R BE<=50Ω 40 V IC Collector Current 150 mA ICM Collector Peak Current 300 mA Pt Total Power Dissipation @ T C = 125° 1.5 W TJ Junction Temperature 200 °C TStg Storage Temperature -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJa Thermal Resistance, Junction to Ambient 250 K/W RthJmb Thermal Resistance, Junction to Mounting Base 50 K/W RthJmb-h Thermal Resistance, Junction to Mounting Base to heatsink 1.2 K/W
09/11/2012 COMSET SEMICONDUCTORS 2 | 3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICB0 Collector Cutoff Current I E=0, VCB=20 V, TJ=150°C - - 20 µA hFE DC Current Gain IC=50 m A, VCE=5.0 V 25 - - - IC=150 mA, VCE=5.0 V 25 - - fT Transition frequency VCE=15 V, IC=150 mA f=500 MHz - 1.2 - GHz CC Collector capacitance at f=1MHz IE= Ie = 0, VCB=15 V - - 4 pF Cre Feedback capacitance at f=1MHz IC= 10 mA, VCE=15 V Tamb= 25°C - 1.7 - F Noise figure at f= 200 MHz IC= 30 mA, VCE=15 V ZS= 75 Ω, Tamb= 25°C - - 6 dB GP Power gain (not neutralized) IC= 70 mA VCE=18 V Tamb= 25°C
200 MHz - 16 -
800 MHz - 6.5 -
09/11/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-39 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data a re subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector