BFT51F ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 10 V BVCER IC = 10 mA R BE = 100 Ω 19 V BVCBO IC = 5.0 mA 20 V BVEBO IC = 1.0 mA 3.0 V ICES VCE = 10 V 100 µµµµA HFE VCE = 5.0 V IC = 100 mA IC = 300 mA --- ft VCE = 5.0 V IC = 300 mA f = 100 MHz 1.0 2.0 GHz Ccb VCB = 5.0 V f = 1.0 MHz 4.2 Pf CC VCB = 5.0 V f = 1.0 MHz 5.8 Pf NPN SILICON HIGH FREQUENCY TRANSISTOR BFT51F DESCRIPTION: The ASI BFT51 is Designed for High Frequency Amplifier Applications. MAXIMUM RATINGS IC 500 mA VCE 20 V PDISS 3.0 W @ TC = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +175 °C θθθθJC 20 K/W PACKAGE STYLE TO- 126