BFS20 HTSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
FEATURES
Very Low Feedback Capacitance Low Current Low Voltage
APPLICATIONS
IF and VHF Applications in Thick and Thin-Film Circuits MARKING:G11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current 25 mA PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Collector cut-off current ICEO VCE=15V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=7mA 40 120 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.3 V Base-emitter voltage VBE VCE=10V, IC=7mA 0.9 V Transition frequency fT VCE=10V,IC=5mA, f=100MHz 275 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 1 pF 1. BASE 2. EMITTER 3. COLLECTOR SOT–23 BFS20 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu