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RF & Protection Devices Data Sheet Revision 1.2, 2013-04-09 BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

81726 Munich, Germany

© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet 3 Revision 1.2, 2013-04-09 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CI POS™, CIPURSE™, EconoPAC K™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAV E™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, Pr imePACK™, PrimeSTACK™, PR O-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SI EGET™, SINDRION™, SIPMOS™, SmartL EWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Te chnologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVC o, LLC (Visa Holdings In c.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corp oration. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrot echnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Allianc e, Inc. MIPS™ of MIPS Technologies, Inc., U SA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Si rius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRO NIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RI VER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 BFR840L3RHESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2013-04-09, Revision 1.2 Page Subjects (major changes since last revision) This data sheet replaces the revision from 2012-07-11. P. 8 Item about AEC-Q101 added to feature list, minor changes. P. 27 Picture for marking description updated.

Data Sheet 4 Revision 1.2, 2013-04-09 Table of Contents

Data Sheet 6 Revision 1.2, 2013-04-09 List of Tables

Data Sheet 7 Revision 1.2, 2013-04-09

1 Product Brief

The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz Wi-Fi applications. The device is based on Infineon´s reliable high volume SiGe:C technology. The BFR840L3RHESD provides inherently good input an d output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi application. Integrat ed protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery- powered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules.

Features

Data Sheet 8 Revision 1.2, 2013-04-09

2 Features

Applications

As Low Noise Amplifier (LNA) in

Mobile and fixed connectivity applic ations: WLAN 802.11, WiMAX and UWB
Satellite communication systems: satellite radio (SDA Rs, DAB), navigation systems (e.g. GPS, Glonass) and C-band LNB (1st and 2nd stage LNA)
Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
Ka-band oscillators (DROs) Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Robust ultra low noise amplifier based on Infineon´s reliable high volume SiGe:C bipolar technology
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
Very high transition frequency fT = 75 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA
High gain | S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Pb free (RoHS compliant) and halogen free very small thin leadless package (package height 0.31 mm, ideal for modules)
Qualification report according to AEC-Q101 available TSLP-3-9 Product Name Package Pin Configuration Marking BFR840L3RHESD TSLP-3-9 1 = B 2 = C 3 = E T8

Data Sheet 9 Revision 1.2, 2013-04-09

3 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage VCEO –2 . 2 5 2.0 V TA = 25 °C TA = -55 °C Open base Collector emitter voltage1) 1) VCES is identical to VCEO due to design VCES –2 . 2 5 2.0 V TA = 25 °C TA = -55 °C E-B short circuited Collector base voltage2) 2) VCBO is similar to VCEO due to design VCB0 –2 . 9 2.6 V TA = 25 °C TA = -55 °C Open emitter Base current IB -5 3 mA – Collector current IC –3 5 m A – RF input power PRFin –2 0 d B m – ESD stress pulse VESD -1.5 1.5 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation3) 3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Ptot –7 5 m W TS ≤ 111 °C Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C –

Data Sheet 10 Revision 1.2, 2013-04-09

4 Thermal Characteristics

Figure 4-1 Total Power Dissipation Ptot = f (TS) Table 4-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point1) 1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) RthJS –5 2 1 –K / W – 0 50 100 150 TS [°C] Ptot [mW]

Electrical Characteristics

Data Sheet 11 Revision 1.2, 2013-04-09

5 Electrical Characteristics

5.1 DC Characteristics

5.2 General AC Characteristics

Table 5-1 DC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 – V IC =1m A , IB =0 Open base Collector emitter leakage current ICES ––4 0 0 n A VCE =1 . 5V , VBE =0 E - B short circuited Collector base leakage current ICBO ––4 0 0 n A VCB =1 . 5V , IE =0 Open emitter Emitter base leakage current IEBO ––1 0 μA VEB =0 . 5V , IC =0 Open collector DC current gain hFE 150 260 450 VCE =1 . 8V , IC = 10 mA Pulse measured Table 5-2 General AC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –7 5 –G H z VCE =1 . 8V , IC =2 5m A f =2G H z Collector base capacitance CCB –5 2 –f F VCB =1 . 8V , VBE =0 f =1M H z Emitter grounded Collector emitter capacitance CCE –0 . 3 4 –p F VCE =1 . 8V , VBE =0 f =1M H z Base grounded Emitter base capacitance CEB –0 . 3 4 –p F VEB =0 . 4V , VCB =0 f =1M H z Collector grounded

Data Sheet 12 Revision 1.2, 2013-04-09

5.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C Figure 5-1 BFR840L3RHESD Testing Circuit Table 5-3 AC Characteristics, VCE = 1.8 V, f =0 . 4 5G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –3 1 – IC =1 0m A Transducer gain | S21|2 –2 7 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 5 – IC =5m A Associated gain Gass –2 7 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –2 1 – IC =1 0m A Bias -TBias -T TSLP-3-9 testing circuit RF- In RF - Out VB In VC Out GND

Data Sheet 13 Revision 1.2, 2013-04-09 Table 5-4 AC Characteristics, VCE = 1.8 V, f =0 . 9G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 9 – IC =1 0m A Transducer gain | S21|2 –2 6 . 5 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 5 5 – IC =5m A Associated gain Gass –2 6 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 8 . 5 – IC =1 0m A Table 5-5 AC Characteristics, VCE = 1.8 V, f =1 . 5G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 7 – IC =1 0m A Transducer gain | S21|2 –2 5 . 5 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 5 5 – IC =5m A Associated gain Gass –2 4 . 5 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 7 – IC =1 0m A Table 5-6 AC Characteristics, VCE = 1.8 V, f =1 . 9G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 6 . 5 – IC =1 0m A Transducer gain | S21|2 –2 5 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 6 0 – IC =5m A Associated gain Gass –2 4 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 7 – IC =1 0m A

Data Sheet 14 Revision 1.2, 2013-04-09 Table 5-7 AC Characteristics, VCE = 1.8 V, f =2 . 4G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 5 . 5 – IC =1 0m A Transducer gain | S21|2 –2 4 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 6 – IC =5m A Associated gain Gass –2 2 . 5 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 7 – IC =1 0m A Table 5-8 AC Characteristics, VCE = 1.8 V, f =3 . 5G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 3 . 5 – IC =1 0m A Transducer gain | S21|2 –2 2 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 6 – IC =5m A Associated gain Gass –2 0 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 8 – IC =1 0m A Table 5-9 AC Characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gms –2 2 – IC =1 0m A Transducer gain | S21|2 –1 9 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 6 5 – IC =5m A Associated gain Gass –1 6 . 5 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –4– IC =1 0m A 3rd order intercept point at output OIP3 –1 8 – IC =1 0m A

Data Sheet 15 Revision 1.2, 2013-04-09 Note: 1. OIP3 value depends on the termination of all intermodulation frequency components. The termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Table 5-10 AC Characteristics, VCE = 1.8 V, f =1 0G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –1 6 – IC =1 0m A Transducer gain | S21|2 –1 3 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –0 . 9 – IC =5m A Associated gain Gass –1 1 . 5 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –3– IC =1 0m A 3rd order intercept point at output OIP3 –1 7 – IC =1 0m A Table 5-11 AC Characteristics, VCE = 1.8 V, f =1 2G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –1 3 . 5 – IC =1 0m A Transducer gain | S21|2 –1 0 – IC =1 0m A Minimum Noise Figure dB Minimum noise figure NFmin –1 . 1 – IC =5m A Associated gain Gass –1 2 – IC =5m A Linearity dBm ZS = ZL =5 0 Ω 1 dB compression point at output OP1dB –3– IC =1 0m A 3rd order intercept point at output OIP3 –1 7 – IC =1 0m A

Data Sheet 16 Revision 1.2, 2013-04-09

5.4 Characteristic DC Diagrams

Figure 5-2 Collector Current vs . Collector Emitter Voltage IC = f (VCE), IB = Parameter Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V 0 0.5 1 1.5 2 2.5 3 VCE [V] IC [mA] IB = 10µA IB = 20µA IB = 30µA IB = 40µA IB = 50µA IB = 60µA IB = 70µA 210 IC [mA] hFE

Data Sheet 18 Revision 1.2, 2013-04-09 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V −11 −10 VEB [V] IB [A]

Data Sheet 19 Revision 1.2, 2013-04-09

5.5 Characteristic AC Diagrams

Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameter 0 5 10 15 20 25 30 35 40 IC [mA] fT [GHz] 2.00V 1.80V 1.50V 1.00V 0.50V 0 5 10 15 20 25 30 IC [mA] OIP3 [dBm] 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz

Data Sheet 26 Revision 1.2, 2013-04-09

6 Simulation Data

For the SPICE Gummel Poon (GP) model as well as fo r the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFR840L3RHESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model al ready contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz usi ng typical devices. The BFR840L3RHESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedanc e, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

Package Information TSLP-3-9 Data Sheet 27 Revision 1.2, 2013-04-09

7 Package Information TSLP-3-9

Figure 7-1 Package Outline Figure 7-2 Package Footprint Figure 7-3 Marking Description (Marking BFR840L3RHESD: T8) Figure 7-4 Tape Dimensions TSLP-3-9-PO V01 Pin 1 marking Top view Bottom view 2 1 ±0.0350.5 0.575 ±0.0350.4 1) ±0.0352x 0.25 1) 0.35 ±0.0352x0.15 1) 1) Dimension applies to plated terminal 0.31-0.02 +0.01 ±0.05 ±0.05 ±0.051 0.6±0.05 Stencil aperturesCopper Solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 R0.1 R0.19 TSLP-3-9-FP V01 TSLP-3-9_marking V01.vsd Pin 1 marking Laser marking Type Code XY TSLP-3-9-TP V02 0.8 1.2 0.35 Pin 1 marking

Published by Infineon Technologies AG www.infineon.com

Product Information

BFR840L3RHESD specifications and overview.

Summary

Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision 1.2, 2013-04-09

Description

Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision 1.2, 2013-04-09

Source title BFR840L3RHESD Datasheet(PDF) - Infineon Technologies AG

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