BFR65 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 25 V BVCER IC = 5.0 mA R BE = 10 Ω 40 V BVCBO IC = 1.0 mA 40 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 20 V 100 µµµµA hFE VCE = 20 V IC = 200 mA IC = 400 mA --- VCE(SAT) IC = 200 mA I B = 20 mA 0.75 V Cob VCB = 20 V f = 1.0 MHz 10 pF ft VCE = 20 V I C = 200 mA f = 500 MHz VCE = 20 V I C = 400 mA f = 500 MHz 1.2
1.0 GHz
VCE = 20 V I C = 200 mA f = 200 MHz f = 800 MHz 15 19 4.5 dB Po VCE = 20 V I C = 200 mA f = 200 MHz 450 mW NPN SILICON RF POWER TRANSISTOR BFR65 DESCRIPTION: The ASI BRF65 is Designed for
20 V Large-Signal RF Amplifier
Applications. MAXIMUM RATINGS IC 400 mA 1.0 A (PEAK) f = ≥ 1.0 MHz VCE 25 V VCB 40 V PDISS
5.0 W @ Tmb = 125
O C f = ≥ 1.0 MHz TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 15 O C/W PACKAGE STYLE SOT- 48 ALL DIMENSIONS IN MM 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE