BF821 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF821/BF8 TRANSISTOR ( PNP)

FEATURES

z Low current (max.-50 mA) z High voltage (max.-300V) z Telephony and professional communication equipment. MARKING: BF821:1W, BF823: 1Y MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage BF821 BF823 -300 -250 V V CEO Collector-Emitter Voltage BF82 1 B F 8 23 -300 -250 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -50 mA P C Collector Power Dissipation 0.25 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100 μ A, I E =0 BF821 BF823 -300 -250 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 BF821 BF823 -300 -250 V Emitter-base breakdown voltage V (BR)EBO I E = -100 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-200V,I E =0 -0.01 μ A Emitter cut-off current I EBO V EB = -5V,I C =0 -0.05 μ A DC current gain h FE V CE = -20V,I C =-25mA 50 Collector-emitter saturation voltage V CE(sat) I C =-30mA,I B = -5mA -0.8 V Transition frequency f T V CE =-10V, I C = -10mA, 100MHz

60 MHz

Collector output capacitance C ob V CB =-30V,I E =0,f=1MHz 1.6 pF SOT-23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com B,Oct,2014 JC(T

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 2 A,Jun,2014www.cj-elec.com B,Oct,2014

www.cj-elec.com 3 A,Jun,2014www.cj-elec.com B,Oct,2014