BF820 HTSEMI | Alldatasheet
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z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. MARKING: BF820:1V, BF822: 1X MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage BF820 BF822 300 250 V V CEO Collector-Emitter Voltage BF820 B F 8 2 2 300 250 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 0.25 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100 μ A, I E =0 BF820 BF822 300 250 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 BF820 BF822 300 250 V Emitter-base breakdown voltage V (BR)EBO I E = 100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =200V,I E =0 0.01 μ A Emitter cut-off current I EBO V EB = 5V,I C =0 0.05 μ A DC current gain h FE V CE = 20V,I C =25mA 50 Collector-emitter saturation voltage V CE(sat) I C =30mA,I B = 5mA 0.6 V Transition frequency f T V CE =10V, I C = 10mA, 100MHz
60 MHz
Collector output capacitance C ob V CB =30V,I E =0,f=1MHz 1.6 pF SO T -23 1. BASE 2. EMITTER 3. COLLECTOR BF8 20/ BF8 22 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu BF8 20/ BF8 22