BF821 TEL | Alldatasheet
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SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y ABSOLUTE MAXIMUM RATINGS BF821 BF823 Collector–base voltage (open emitter) –V CB0 max. 300 250 V Collector–emitter voltage (open base) –V CE0 max. — 250 V Collector–emitter voltage (RBE = 2,7 k W)– V CER max. 300 – V Collector current (peak value) –I CM max. 100 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Junction temperature T j max. 150 ° C D.C. current gain –IC = 25 mA; –V CE = 20 V h FE >5 0 Feedback capacitance at f = 1 MHz
- I C = 0; –VCE = 30 V C re < 1,6 pF Transition frequency at f = 35 MHz –IC = 10 mA; –V CE = 10 V f T >6 0 MHz BF821 BF823 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package Transys Electronics LI M ITE D
RATINGS (at T A = 25°C unless otherwise specified) Limiting values BF821 BF823 Collector–base voltage (open emitter) –V CB0 max. 300 250 V Collector–emitter voltage (open base) –V CE0 max. — 250 V Collector–emitter voltage (RBE = 2,7 k W)– V CER max. 300 — V Emitter–base voltage (open collector) –V EB0 max. 5 V Collector current (d.c.) – I C max. 50 mA Collector current (peak value) –I CM max. 100 mA Total power dissipation up to T amb = 25 °C P tot max. 250 mW Storage temperature T stg –55 to +150 ° C Junction temperature T j max. 150 ° C THERMAL RESISTANCE From junction to ambient R th j–a = 500 K/W CHARACTERISTICS T j = 25 °C unless otherwise specified BF821 BF823 Collector cut–off current IE = 0; –V CB = 200V –I CB0 <1 0 1 0 n A Collector–emitter voltage RBE = 2,7 k W; VCE = 250 V –I CER <5 0 5 0 n A RBE = 2,7k W; V CE = 200V; T j = 150°C –I CER <1 0 1 0 mA Saturation voltage –IC = 30 mA; –l B = 5 mA –V CEsat< 0,8 V D.C. current gain IC = 25 mA; –V CE = 20 V h FE >5 0 Transition frequency at f = 35 MHz –IC = 10 mA; —V CE = 10 V f T >6 0 MHz Feedback capacitance at f = 1 MHz IC = 0; –V CE = 30 V Cre < 1,6 pF BF821 BF823