BF622 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
MARKING:DA MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 250 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 250 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V Collector cut-off current I CBO V CB =200V,I E =0 10 nA Emitter cut-off current I EBO V EB =5V,I C =0 50 nA DC current gain h FE V CE =20V, I C =25mA 50 Collector-emitter saturation voltage V CE(sat) I C =30mA,I B =5mA 0.6 V Transition frequency f T V CE =10V,I C =10mA, f=100MHz 60 MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage 250 V V CEO Collector-Emitter Voltage 250 V V EBO Emitter-Base Voltage 5 V I C Collector Current 50 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ BF622 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu