BF620 HTSEMI | Alldatasheet
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FEATURES
z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. Marking：DC MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 300 V V CEO Collector-Emitter Voltage 300 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 500 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 300 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 300 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =200V, I E =0 10 nA Emitter cut-off current I EBO V EB =5V, I C =0 50 nA DC current gain h FE V CE =20V, I C =25mA 50 Collector-emitter saturation voltage V CE(sat) I C =30mA, I B =5mA 0.6 V Transition frequency f T V CE =10V, I C =10mA, f=100MHz 60 MHz SOT-89 1. BASE 2. COLLECTOR 3. EMITTER BF620 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu Typical Characteristics