BF620

BF620 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors BF620 TRANSISTOR (NPN)

FEATURES

z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. Marking：DC MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 300 V V CEO Collector-Emitter Voltage 300 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 50 mA P C Collector Power Dissipation 500 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 300 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 300 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =200V, I E =0 10 nA Emitter cut-off current I EBO V EB =5V, I C =0 50 nA DC current gain h FE V CE =20V, I C =25mA 50 Collector-emitter saturation voltage V CE(sat) I C =30mA, I B =5mA 0.6 V Transition frequency f T V CE =10V, I C =10mA, f=100MHz 60 MHz SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER www.cj-elec.com 1 C,Nov,2015

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout www.cj-elec.com 2 C,Nov,2015

www.cj-elec.com 3 C,Nov,2015