BF620 HOTTECH | Alldatasheet
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Technical content
Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES
- Low current (max. 50mA)
- High voltage (max. 300V).
- Video output stages. M arking:DC Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO 300 V Collector-EmitterV oltage V CEO 300 V Emitter-Base V oltage V EBO 5 V CollectorCurrent-Continuous IC 50 m A CollectorPower dissipation PC 500 m W Junction Temperature TJ 150 StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-basebreakdow n voltage V CBO IC =100μA, IE=0 300 V Collector-emitter breakdow n voltage V CEO IC =1mA, IB =0 300 V Emitter-base breakdow n voltage V EBO IE=100μA, IC =0 5 V Collector cut-off current ICBO V CB =200V , IE=0 10 nA Emittercut-offcurrent IEBO V EB =5V ,IC =0 50 nA DC current gain hFE V CE =20V , IC =25mA 50 Collector-emitter saturationvoltage V CE(sat) IC =30mA, IB =5mA 0.6 V Transition frequency fT V CE =10V , IC =10mA, f=100M H z 60 MHz BF620 (N PN ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER
Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. BF620 Typical Characteristics