BF494 MICRO-ELECTRONICS | Alldatasheet
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cy, LYS. NPN SILICON RF SMALL SIGNAL TRANSISTORS | THE BF494, BF495 ARE NPN SILICON PLANAR CASE 10-928 EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE | ABSOLUTE MAXIMUM RATINGS BFA94 —_ BFA95 } Collector-Base Voltage Voso 30V 30V Collector-Emitter Voltage VCEO 20V 20V Emitter-Base Voltage VEBO 5v 5v Collector Current Ic 30mA Total Power Dissipation (TA<75°C) Ptot 300mW derate 4mw/°C above 75°C Operating Junction & Storage Temperature Tj, Tste -55 to 150°C | ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Br 494 BR499 _ |onIT| TEST CONDITIONS |
7 MIN TYP MAX | MIN TYP MAX |
Emitter-Base Breakdown Voltage} BVgBO 5 5 v Tg=10pa Ig=0 Collector Cutoff Current IcBo 0.1 0.1} pA | Vcp=300V Ip=0 Collector Cutoff Current IcEO 1 1} pA | VoE=20V Ip=0 Collector-Snitter Saturation | Vox(sat) 0.1 0.1 v_ | Ic=l0mA Ip=lmA Voltage | Base#Enitter Voltage VBE 265 668 .74] .65 .68 .74) V Tc=lmA VcE=10V D.C. Current Gain ERE 67.115 220] 36 67 125 Ic=lmA Vcp=l0Vv*| | | Current Gain-Bandwidth Product] fp 260 200 MHz! Ic=lmA Vcg=l0V | Feedback Capacitance Cre 85 85 pF | Ic=lmA VcE=10V | f£=450KH2 Noise Figure NF 4 4 aB Ic=lmA Vog=l0V Rg=1000 f=1O0MHz Mixing Noise Figure NFo 2 dB} Ic=lmA Vcog=10V i Rg=8302 f=1MHz NFo 2.5 dB | Ig=lmA Vceg=l0V RG=6700 f=1MH2 * HFE Grouping : 8: 100-220 C : 72-110 D : 36-80 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX #43510 MICRO ELECTRONICS LTD KWON TONG P, 0, BOX69477 CABLE ADDRESS “MICROTRON” FAX: 3-4103; tae Bre? " TELEPHONE:- 3-430181-6 -2-893368, 2-892423:
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