BF491 MICRO-ELECTRONICS | Alldatasheet
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a We ey 8, Oe ei. 2 : PNP SILICON | ; E E Nw” NS HIGH VOLTAGE EW TRANSISTORS | a BF491, BF492, BF493 are PNP silicon planar transistors designed for high voltage video i amplifiers in television receivers requiring . ‘ high breakdown voltage and low capacitance. | EBC | ABSOLUTE MAXIMUM RATINGS BF491 BF492 BF493 Collector-Emitter Voltage VoEo 200V 250V 300V Collector-Base Voltage Vego 200v 250V 300V Emitter-Base Voltage VeBo 6V 8v 8v Collector Current I, 500mA Total Device Dissipation @ T,=25°C Pp 625mW Derate Above 25°C 1. 2mW/°C Total Device Dissipation @ Tp=25°C Py 1.5W Derate Above 25°C 12mW/°c ) Operating & Storage Junction Temperature Range Tj, Tstg -55 to 150°C ELECTRICAL CHARACTERISTICS (Ty=25°C unless otherwise noted) Collector-Base Breakdown Voltage BYcBO 200° ~~ }250°-*--1300 ¢ Vv |Ic=0.1ma TBO | Collector-Emitter Breakdown Voltage | BVcEO* '|200° _ [250 ~ }300 Vv |Ic=lma “la Tpet | Emitter-Base Breakdown Voltage BEBO" “} 6 8 8 : v Tg=0.1mA Iga | Collector Cutoff Current “1 "Zeg0 0.1] * | pa |Vou-260v . t¢c | ; . , 0.1{ 0.1 nA |VcBe200¥ ‘IgHC Emitter Cutoff Current _ | Txpo 0.1}. ‘pa |Ver=4¥— IcaC 0.2 0.2| pa |VEBe6¥— Icat |Collector-Baitter Saturation Voltage] Vox(sat) 2 2 2|V |Ice20mA Ip=2n Base-Buitter Saturation Voltage VpE(sat) 2 2 2/.V |Ic=20mA- Ip=2r | D.C. Current Gain . Bre: |-25. | 25 25 Jtc=lma VoE=1¢ | __|Carrent Gain-Bandwidth Product fy 50 50 50 MHz Toa Oma-VoE=A | C Feedback Capacitance ' Cre: 2] ° 2 2| pF ¥og=100V IE=0 | . ; me *Pulse Test : Pulse Width <300uS, Duty Cycle<2%. : ~~ | MICRO ELECTRONICS LID. 2 #479 BRA 3] 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex:43510 Micro HX. | P.O. Boxs9477, Kwun Tong. Tel: 3-430181-6 893363; 3-092423,S-09822 FAY. 3410321 | : Ind. BoP
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