BF423 MICRO-ELECTRONICS | Alldatasheet
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F Pa ha He cote ee & PNP : mo Se pd = “es ee TRANSISTOR a BF423 is PNP silicon planar epitaxial transistor designed TO-92 for high voltage video amplifiers in colour television | receivers including grid driver and in driver stages of | high voltage line deflection circuits. It is complementary | to BF422. | ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCcBO 250V Collector-Emitter Voltage VCEO 250V Emitter-Base Voltage VEBO 5V Collector Current Ic 200mA Total Power Dissipation Ptot 830mW Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C | ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | MIN MAX | UNIT | TEST CONDITIONS | Collector-Base Breakdown Voltage BYCBO 250 Vv Ic=10yA IE=0 | Collector-Emitter Breakdown Voltage | BVCEO 250 Vv IC=2.5mA I8=0 | Emitter-Base Breakdown Voltage BVE80 5 Vv IE=10upA Ic=0 | Collector Cutoff Current ICBO 10 | nA |VCB=200V IE=0 | Emitter Cutoff Current IEBO 10] nA | VEB=5V C=O D.C. Current Gain HFE 50 IC=25mA - VCE=20V (Current Gain-B3andwidth Product fT 60 MHz | IC=10mA - VCE=10V MICRO ELECTRONICS LID. 32#+4 BRA 4) 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong, Telex: 43510 Micro Hx. P.O. Box69477, Kwun Tong. Tel: 3-430181-6 ,-3;893363;3-892423;3-B9822+ FAX: 3-410321 f-f. Bm? a