BF422A3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Low feedback capacitance.

Applications

  • Class-B video output stages in color television and professional monitor equipment. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Conditions Min Max Unit Collector-Base V oltage V CBO Open emitter 250 V Collector-Emitter V oltage V CEO Open base 250 V Emitter-Base V oltage V EBO Open collector 5 V Collector Current (DC) I C 50 mA Peak Collector Current I CM 100 mA Peak Base Current I BM 50 mA Power Dissipation; Pd Tamb≤25℃ ; Note 830 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65 +150 °C Operating Ambient Temperature Tamb -65 +150 °C Note : Transistor mounted on a printed-circuit board. BF422A3 TO-92 B：Base C：Collector E：Emitter E C B

CYStech Electronics Corp. Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 2/4 BF422A3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 250 - - V I C=100µA BVCEO 250 - - V I C=1mA BVEBO 5 - - V I E=10µA - - 10 nA I E=0, VCB=200V ICBO - - 10 µA IE=0, VCB=200V , Tj=150℃ IEBO - - 50 nA I C=0, VEB=5V *VCE(sat) - - 0.6 V I C=30mA, IB=5mA *hFE 50 - - - V CE=20V , IC=25mA Cre - - 1.6 pF I C=iC=0, VCE=30V , f=1MHz fT 60 - - MHz V CE=10V , IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Thermal Characteristics Symbol Parameter Conditions Value Unit RthJA Thermal resistance from junction to ambient Note 150 K/W Note : Transistor mounted on a printed-circuit board

CYStech Electronics Corp. Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 3/4 BF422A3 CYStek Product Specification Characteristic Curves Current Gain vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Current Gain---HFE VCE = 5V VCE = 10V VCE = 20V Saturation Voltage vs Collector Current 100 1000 10000 1 10 100 Collector Current---IC(mA) Saturation Voltage---(mV)VCE(SAT) @ IC = 10IB VCE(SAT) @ IC = 20IB Saturation Voltage vs Collector Current 100 1000 1 10 100 Collector Current---IC(mA) Saturation Voltage---(mV) VBE(SAT) @ IC =10IB Power Derating Curve 100 200 300 400 500 600 700 800 900 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 4/4 BF422A3 CYStek Product Specification TO-92 Dimension *: Typical D 0.0142 0.0220 0.36 0.56 α 1 - *5° - *5° F 0.1323 0.1480 3.36 3.76 α 3 - *2° - *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BF422 Marking: A D B C I α 1 E F α 2 α 3 GH Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3