BF420 MICRO-ELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
Bo is << —— % #3) HIGH VOLTAGE oe 0 ey netic” SILICON TRANSISTOR | a ’ TO-92. BF420 and BF421 are complementary NPN/PNP silicon planor : | epitaxial transistor . Designed for high voltage video ~ | amplifiers in colour television receivers including grid | drive and in driver stages of high voltage line deflection | | circuits . Eryyc ABSOLUTE MAXIMUM RATINGS . Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 300V Emitter-Base Voltage VEBO 5V Collector Current Ic 200mA Total Power Dissipation Ptot 830mW | (mounted on a copper plate of length 3mm max and area lom2) | Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) | PARAMETER SYMBOL [man max | unr | TEST CONDITIONS | Collector-Base Breakdown Voltage BVCBO 300 7 Ic=10pA = IE=O Collector-Emitter Breakdown Voltage | BVCEO 300 v IC=2.5mA IB=0 | Emitter-Base Breakdown Voltage BVEBO 5 Vv IE=10pA =‘ IC=0 | Collector Cutoff Current ICBO 10 nA VCB=200V IE=0 | Emitter Cutoff Current IEBO 10 nA VEB=5V IC=0 | D.C. Current Gain HFE 40 IC=25mA = VCE=20V | Current Gain-Bandwidth Product fT 60 MHZ | IC=10mA VCE=10V | Output Capacitance Cob 2.0typ pF VCB=30V IE=0 ) f21MHZ | MICRO ELECTRONICS LID. 3 #+4 RA) 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro Hx. | P.0, Box69477, Kwun Tong, Tel: 3-430181-6, 2-983962;2-802423,380822+ FAY. 3419994 | I<, BaP a : Lee