BF397 MICRO-ELECTRONICS | Alldatasheet
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: ak ee: 2 “e:. Set tee Ba UN See at em, ae PNP SILICON TRANSISTOR a BF397 is PNP silicon transistor designed for T0-92F high voltage applications. i H CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage vcBO 90V Collector-Emitter Voltage VCEO 90V Emitter-Base Voltage VEBO 6V Total Power Dissipation Ptot 625mW Collector Current Ic 100mA Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX | UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 90 Vv Ic=10pA IE=0 Collector-Emitter Breakdown Voltage | BVCEO 90 Vv IC=10mA IB=0 | Emitter-Base Breakdown Voltage BVEBO 6 Vv IE=10pA IC=0 | Collector Cutoff Current ICBO 50{} nA | VCB=70V IE=0 : | Emitter Cutoff Current IEBO 50 | nA | VEBs4V IC=0 | D.C. Current Gain HFE 20 Ic=100nA VCE=10V
25 IC=1mA —- VCE=10V
40 250 ICc=10mA VCE=10V
20 IC=100mA VCE=10V
Base-Emitter Saturation Voltage VBE (sat) 0.9) V IC=10mA IB=1mA alte etter Saturation VCE (sat) 0.5| Vv Ic=10mA IB=1mA MICRO ELECTRONICS LID. 32#+47 1824) . | 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro Hx. . P.O. Boxi9477, Kwun Tong, Tel: 3-430181-6, 3-893363;2-892423;3-69822+ FAY. 3 41937] | a