BF370

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TO – 92 1.COLLECT OR 2. BASE 3. EMITTER JIANGSU CHANGJIANG ELEC TRONICS TECHNOLOGY CO., LTD TO -92 Plastic-Encapsulate Transistors BF370 TRANSISTOR (NPN) FEA TURES z Low Saturation Medium Current Application z High Transition Frequency MAXIMUM RATINGS (Ta=25℃ unless otherw ise noted) ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherw ise specified) Parameter Symbol Test conditions Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O I C= 0.1mA,IE=0 40 V Collecto r-emitter breakdown voltage V(BR)CE O I C=1mA,IB=0 15 V Emitter-ba se breakdown voltage V(BR )EBO I E=100μA,IC=0 4.5 V Collecto r cut-off current ICBO V CB=20V ,IE=0 0.4 μA Emitter cut-off current IEBO V EB=2V ,IC=0 0.1 μA DC curr ent gain hFE V CE=1V , IC=10mA 40 200 Collecto r-emitter saturation voltage VCE(sa I C=15mA,IB=1. 5mA 0.2 V Base -emitter saturation voltage VBE(sat) I C=15mA,IB=1. 5mA 1.2 V Tr ansition frequency fT V CE=10V,IC= 10mA,f=

100 MHz 500 MHz

ltage 4.5 V IC Collector Curr ent 0.1 A PC Collector Po wer Dissipation 500 mW RθJA Thermal Resist ance From Junction To Ambient 250 ℃/W TJ Junction Temperature 150 ℃ Tstg St orage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015

A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C ,Dec,2015

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