BF245 MICRO-ELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
ro}
5 N-CHANNEL
a DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed —_—for VHF/UHF amplitiers and mixer. i GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current ID 25mA Gate Current IG 10mA. Total Power Dissipation Ptot 300mW Operating & Storage Junction Temperature Tj, Tstg -65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER T syMBoL | MIN MAX | UNIT Gate-Source Breakdown Voltage | BvGss 30 IG=1pA VDS=0 Gate Leakage Current [css | ——5_—«|_—snA_[VGS=20V VDS=0 Drain Current Al IDSs 2 65 | mA |VDS=15V VGS=0 B 6 15 | mA a Cc 12 25 mA Gate-Source Voltage A vos | 04 22 vy |VDS=15V ID=200A | | 16 3.8 v NX ee ee 2 32.75 v — Gate-Source Cutoff Current | vasor) | 05 8 Forward Transfer Admittance | ¥fs 3 6.5 — ee | f= 1kHz Feedback Capacitance | Ciss | 4 pF | VDS=20V Input Capacitance | Crss Li | pF |VGS=1V Output Capacitance Coss 16 | pF [f=1MHz * Pulse test : pulse width <300uS, duty cycle < 2%. - BZ MICRO ELECTRONICS LTD. “4 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. ——oooOOOoeeeeeeEeEee=e=xacmOO EO |