BF224 MICRO-ELECTRONICS | Alldatasheet
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5 2 ce 2 Le BF224 | ee BF224 is an NPN silicon planar epitaxial CASE _TO-92E transistor designed for -general purpose high frequency oscillator, amplifier,and ‘ CEB mixer applications. . @ CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VcBoO 45V Collector-Emitter Voltage VCEO 30V Emitter-Base Voltage VEBO 4V Collector Current Ic 50mA Total Power Dissipation Ptot 250mW Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS @ Ty=25°C (unless otherwise noted) ‘ PARAMETER SYMBOL |MIN TYP MAX | UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 45 Vv Ic=100nA Ie=0 Collector-Emitter Breakdown VoltageBVcEO 30 Vv Ic=7mA Ip=0 Emitter-Base Breakdown Voltage IBVEBO 4 Vv IEg=100pA Ic=0 Collector Cutoff Current ITCBO 100] nA | VcB=20V IE=0 10} 4A | VcB=20V TA=85°C Emitter Cutoff Current TEBO 100] nA | VeB=3V Ic=0 Collector-Emitter Saturation IVCE (SAT), 0.15} V_ |'Ic=l0mA IB=1mA Voltage Base-Emitter Voltage BE 0.9) V Ic=7mA VoB=10V D.C. Current Gain IHFE 30 Ec=7mA VcE=10V Current Gain-Bandwidth Product fT 300 450 MHz | Ic=1.5mA YCE=10V|
500 MHz | IC=7mA VcE=10V
Feedback Capacitance re 0.3 pF | IE=lmA VCB=10V f f=10.7MHz MICRO ELECTRONICS LTD. 32 #45 R25) ME 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex :43510 Micro HX. P.O. Bob9477, Kwun Tong, Tel: 3-430181-6 9-899963-3-092429;3-098224 FAX: 3410321 |