BF199 MICRO-ELECTRONICS | Alldatasheet
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. VY wit iW | t NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR | MICRO SLECTRONICS | BF199 is an NPN silicon planar epitaxial CASE 10-928 transistor designed for RF amplifiers and video IF amplifiers in common emitter configuration. i ABSOLUTE MAXIMUM RATINGS CBE Collector-Base Voltage VcBo 40v Collector-Emitter Voltage VCEO 25 Emitter-Base Voltage VEBO av Collector Current Ic 25mA Base Current IB mA Total Power Dissipation @ Ta 45°C Ptot 300m Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C EEECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER MIN TYP MAX TEST CONDITIONS | ICollector-Base Breakdown Voltage BYcBO 40 v TC=10pA In=0 | ’ ¥Icollector-Emitter Breakdown Voltage | LVCEO 25 v Ic=2mA IB=0 Nmitter-Base Breakdown Voltage BVEBO 4 Vv Ip=10nA Ic=0 Collector Cutoff Current IcBo 100] nA VcBp=20V Ip-0 Base-Emitter Voltage VBE 0.78 0.9] V VcE=10V Ic=7mA D.C. Current Gain AFE 38 «85. VcE=10V Ic=7mA Current Gain-Bandwidth Product fT 700 MHz | VcB=10V Ic=5mA £=100MHz (Feedback Capacitance Cre 0.32 pF VcB=10V Ic=1mA =0.47MH TWO PORT CHARACTERISTICS | PARAMETER sympoL | tye [unit | Test CONDITIONS | Input Conductance Bie 5 mS . Input Capacitance Cie 45 pF Reverse Transfer Admittance lyre| 65 2S | vemeiov tgeTma Phase Angle of Transfer Admittance “fre 95 ° £=35MHz Transfer Admittance lyte] 115 mS Phase Angle of Transfer Admittance -¥fe 25 ° Output Conductance Boe 15 ps > loutput Capacitance Goe 1.6 pF : 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 43510 KWUN TONG P, 0, BOX69477 CABLE ADDRESS “MICROTRON” . MICRO ELECTRONICS LTD. TELEPHONE :- sasoece, 9-893363, -3-690423, 3-898221- FAX: 3-410321