BDX87C SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX87C
DESCRIPTION
- With TO-3 package
- Complement to type BDX88C
- DARLINGTON
APPLICATIONS
- Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 18 A IB Base current 0.2 A PT Total power dissipation T C=25 120 W Tj Max. operating Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.45 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX87C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0 100 V VCEsat-1 Collector-emitter saturation voltage I C=6A ;IB=24mA 2.0 V VCEsat-2 Collector-emitter saturation voltage I C=12A ;IB=120mA 3.0 V VBEsat Base-emitter saturation voltage I C=12A ;IB=120mA 4.0 V VBE Base-emitter on voltage I C=6A ; VCE=3V 2.8 V hFE-1 DC current gain I C=5A ; VCE=3V 1000 hFE-2 DC current gain I C=6A ; VCE=3V 750 18000 hFE-3 DC current gain I C=12A ; VCE=3V 100 ICBO Collector cut-off current VCB=100V; IE=0 TC=150 0.5 5.0 mA ICEO Collector cut-off current V CE=50V; IB=0 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 1.0 mA VF-1 Diode forward voltage I F=3A 1.8 V VF-2 Diode forward voltage I F=8A 2.5 V
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX87C PACKAGE OUTLINE Fig.2 Outline dimensions