BDX78 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX78
DESCRIPTION
- With TO-220C package
- Complement to type BDX77
APPLICATIONS
- Medium power switching
- Amplifier PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak tp=10ms -12 A IB Base current -3 A Ptot Total power dissipation T mb=25 60 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a Thermal resistance from junction to ambient 70 K/W
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX78 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage I C=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage I C=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage I C=-6A; IB=-0.6A -1.5 V VBEsat Base-emitter saturation voltage I C=-6A; IB=-0.6A -2.0 V VBE Base-emitter on voltage I C=-3A ; VCE=-2V -1.5 V ICBO Collector cut-off current V CB=-40V; IE=0 -0.1 mA ICEO Collector cut-off current V CE=-30V; IB=0 -0.2 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.5 mA fT Transition frequency I C=-0.3A ; VCE=-3V 7 MHz hFE DC current gain I C=-1A ; VCE=-2V 30 Switching times ton Turn-on time 1.0 µs toff Turn-off time IC=2A IB1=-IB2=0.2A 2.0 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX78 PACKAGE OUTLINE Fig.2 Outline dimensions