BDX77 SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77

DESCRIPTION

  • ·With TO-220C package
  • Low saturation voltage
  • Complement to type BDX78
  • Wide area of safe operation

APPLICATIONS

  • For medium power switching and amplifier applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 8 A ICM Collector current-Peak 12 A IB Base current 3 A PT Total power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 2.08 /W

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 100 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 5 V VCEsat-1 Collector-emitter saturation voltage I C=3A; IB=0.3A 1.0 V VCEsat-2 Collector-emitter saturation voltage I C=6A; IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage I C=6A; IB=0.6A 2.0 V ICEO Collector cut-off current V CE=30V ;IB=0; 0.2 mA ICBO Collector cut-off current VCB=40V ;IE=0;Tj=150 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.5 mA hFE DC current gain I C=1A ; VCE=2V 30 fT Transition frequency I C=0.3A ; VCE=3V 7.0 MHz VBE Base-emitter on voltage I C=3A;VCE=2V 1.5 V Switching times ton Turn-on time 1.0 µs toff Turn-off time IC=2A IB1=-IB2=0.2A; 4.0 µs

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX77 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)