BDX67_12 COMSET | Alldatasheet

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BDX67 – A – B – C 05/10/2012 COMSET SEMICONDUCTORS 1/4 NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX67 60 V BDX67A 80 BDX67B 100 BDX67C 120 VCBO Collector-Base Voltage BDX67 80 V BDX67A 100 BDX67B 120 BDX67C 140 VEBO Emitter-Base Voltage BDX67

5.0 V BDX67A

IC(RMS) BDX67 A BDX67A BDX67B BDX67C ICM BDX67

20 BDX67A

0.25 A BDX67A

@ TC = 25° BDX67

150 Watts W/°C BDX67A

TJ Junction Temperature -55 to +200 °C TS Storage Temperature

BDX67 – A – B – C 05/10/2012 COMSET SEMICONDUCTORS 2/4 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case BDX67 1.17 °C/W BDX67A BDX67B BDX67C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, L=25mH BDX67 60 - - V BDX67A 80 - - BDX67B 100 - - BDX67C 120 - - ICEO Collector Cutoff Current VCE=30 V BDX67 - - 3 mA VCE=40 V BDX67A - - VCE=50 V BDX67B - - VCE=60 V BDX67C - - IEBO Emitter Cutoff Current V BE=5 V BDX67 - - 5.0 mA BDX67A BDX67B BDX67C ICBO Collector-Base Cutoff Current TCASE=25°C VCB=60 V BDX67 - - 1 mA TCASE=200°C VCB=40 V - - 5 TCASE=25°C VCB=80 V BDX67A - - 1 TCASE=200°C VCB=50 V - - 5

BDX67 – A – B – C 05/10/2012 COMSET SEMICONDUCTORS 3/4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector-Base Cutoff Current TCASE=25°C VCB=100 V BDX67B - - 1 mA TCASE=200°C VCB=60 V - - 5 TCASE=25°C VCB=120 V BDX67C - - 1 TCASE=200°C VCB=70 V - - 5 hFE Dc Current Gain VCE=3 V, IC=1 A - 5200 - - VCE=3 V, IC=10 A 1000 - - VCE=3 V, IC=16 A - 4000 - VCE(SAT) Collector-Emitter Saturation Voltage (*) IC=10 A IB=40 mA BDX67 - - 2 V BDX67A BDX67B BDX67C VBE Base-Emitter Voltage(1&2) VCE=3 V IC=10 A BDX67 - - 2,5 V BDX67A BDX67B BDX67C VF Diode Forward Voltage I F=10 A BDX67 - 2,5 - V BDX67A BDX67B BDX67C Cc Collector Capacitance IE=0 A VCB=10V BDX67 - 300 - pF BDX67A BDX67B BDX67C ton Switching Characteristics VCC=12V IC=-10 A IB1=- IB2=0.04 A BDX67 - 1 - µs BDX67A BDX67B BDX67C toff BDX67 - 3.5 - BDX67A BDX67B BDX67C fhfe Small Signal Current Gain VCE=-3 V IC=-5 A BDX67 - 50 - kHz BDX67A BDX67B BDX67C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

BDX67 – A – B – C 05/10/2012 COMSET SEMICONDUCTORS 4/4 MECHANICAL DATA CASE TO-3 Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector