BDX66C SAVANTIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX66C
DESCRIPTION
- With TO-3 package
- DARLINGTON
- High current
APPLICATIONS
- Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -16 A ICM Collector current(peak) -20 A IB Base current -0.25 A PT Total power dissipation T C=25 150 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.17 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX66C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-0.1A ; IB=0;L=25mH -120 V VCEsat Collector-emitter saturation voltage I C=-10A ;IB=-40mA -2 V ICBO Collector cut-off current VCB=-70V; IE=0 TC=150 -1 -5 mA ICEO Collector cut-off current V CE=-60V; IB=0 -3 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -5 mA Switching times ton Turn-on time 1.0 µs toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 3.5 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX66C PACKAGE OUTLINE Fig.2 Outline dimensions