BDX66 COMSET | Alldatasheet

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BDX 66, A, B, C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX66 60 BDX66A 80 BDX66B 100 -VCEO Collector-Emitter Voltage BDX66C 120 V BDX66 60 BDX66A 80 BDX66B 100 -VCBO Collector-Base Voltage BDX66C 120 V -VEBO Emitter-Base Voltage BDX66 BDX66A BDX66B BDX66C 5.0 V -IC(RMS) BDX66 BDX66A BDX66B BDX66C -IC Collector Current -ICM BDX66 BDX66A BDX66B BDX66C A -IB Base Current BDX66 BDX66A BDX66B BDX66C 0.25 A PT Power Dissipation @ TC = 25° BDX66 BDX66A BDX66B BDX66C

150 Watts

W/°C TJ Junction Temperature TS Storage Temperature BDX66 BDX66A BDX66B BDX66C -55 to +200 °C High current power darlingtons designed for power amplification and switching applications. PNP SILICON DARLINGTONS

BDX 66, A, B, C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case BDX66 BDX66A BDX66B BDX66C 1.17 °C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX66 60 - - BDX66A 80 - - BDX66B 100 - - -VCEO(SUS) Collector-Emitter Breakdown Voltage (*) -IC=0.1 A, L=25mH BDX66C 120 - - V -VCE=30 V BDX66 - - -VCE=40 V BDX66A - - -VCE=50 V BDX66B - - -ICEO Collector Cutoff Current -VCE=60 V BDX66C - - 3 mA

BDX 66, A, B, C Symbol Ratings Test Condition(s) Min Typ M x Unit -IEBO Emitter Cutoff Current -VBE=5 V BDX66 BDX66A BDX66B BDX66C - - 5.0 mA TCASE=25°C, -VCB=60 V - - 1 TCASE=200°C, -VCB=40 V BDX66 - - 5 TCASE=25°C, -VCB=50 V - - 1 TCASE=200°C,-VCB=80 V BDX66A - - 5 TCASE=25°C, -VCB=100 V - - 1 TCASE=200°C, -VCB=60 V BDX66B - - 5 TCASE=25°C, -VCB=120 V - - 1 -ICBO Collector-Base Cutoff Current TCASE=200°C, -VCB=70 V BDX66C - 5 mA hFE DC Current Gain -VCE=3 V,- IC=1 A - 2000 - hFE DC Current Gain -VCE=3 V,- IC=10 A 1000 - - hFE DC Current Gain -VCE=3 V,- IC=16 A - 1000 - -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=10 A, -IB=40 mA BDX66 BDX66A BDX66B BDX66C - - 2 V -VBE Base-Emitter Voltage(1&2) -VCE=3 V, -IC=10 A - - 2,5 V VF Diode forward voltage IF=10 A - 2 - V C22b IE=0 A, -VCB=-10V, f=1 MHz BDX66 BDX66A BDX66B BDX66C - 300 - pF ton Switching characteristics VCC=12V, -IC=10 A, -IB1= IB2=40 mA BDX66 BDX66A - 1 - µs

BDX66C - 3.5 - BDX 66, A, B, C Symbol Ratings Test Condition(s) Min Typ Mx Unit fhfe -VCE=3 V,-IC=5 A BDX66 BDX66A BDX66B BDX66C - 60 - kHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,51 1,004 B 38,93 1,53 C 30,12 1,18 D 17,25 0,68 E 10,89 0,43 G 11,62 0,46 H 8,54 0,34 L 1,55 0,6 M 19,47 0,77 N 1 0,04 P 4,06 0,16 Pin 1 : Base Pin 2 : Emitter Case : Collector