BDX65 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65
DESCRIPTION
- With TO-3 package
- DARLINGTON
- Complement to type BDX64
APPLICATIONS
- Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 16 A IB Base current 0.2 A PT Total power dissipation T C=25 117 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 /W Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0;L=25mH 60 V VCEsat Collector-emitter saturation voltage I C=5A ;IB=20mA 2 V VBE Base-emitter voltage I C=5A;VCE=3V 3 V ICBO Collector cut-off current VCB=60V; IE=0 TC=150 0.4 3 mA ICEO Collector cut-off current V CE=30V; IB=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 5 mA VF Diode forward voltage I F=3A 1.8 V hFE-1 DC current gain I C=1A ; VCE=3V 1500 hFE-2 DC current gain I C=5A ; VCE=3V 1000 hFE-3 DC current gain I C=10A ; VCE=3V 1500 fT Transition frequency I C=5A ; VCE=3V;f=1MHz 7 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX65 PACKAGE OUTLINE Fig.2 Outline dimensions