BDX65_12 COMSET | Alldatasheet
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BDX65 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 NPN SILICON DARLINGTON POWER TRANSISTOR The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX65 60 V BDX65A 80 BDX65B 100 BDX65C 120 VCBO Collector-BaseVoltage BDX65 80 V BDX65A 100 BDX65B 120 BDX65C 140 VEBO Emitter-Base Voltage 5.0 V IC Collector Current IC(RMS) 12 A ICM 16 IB Base Current 0.2 A PT Power Dissipation @ T C = 25° 117 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W
BDX65 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 2 | 4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A IB=0 L=25mH BDX65 60 - - V BDX65A 80 - - BDX65B 100 - - BDX65C 120 - - ICEO Collector Cutoff Current VCE=30 V BDX65 - - 1 mA VCE=40 V BDX65A - - VCE=50 V BDX65B - - VCE=60 V BDX65C - - IEBO Emitter Cutoff Current V BE=5 V BDX65 - - 5.0 mA BDX65A BDX65B BDX65C ICBO Collector-Base Cutoff Current VCBO=60 V BDX65 - - 0.4 VCBO=40 V TCASE=200°C - - 3 VCBO=50 V BDX65A - - 0.4 VCBO=80 V TCASE=200°C - - 3 VCBO=100 V BDX65B - - 0.4 VCBO=60 V TCASE=200°C - - 3 VCBO=120 V BDX65C - - 0.4 VCBO=70 V TCASE=200° - - 3 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5.0 A IB=20 mA BDX65 - - 2 V BDX65A BDX65B BDX65C VF Forward Voltage (pulse method) IF=3 A BDX65 - 1.8 - V BDX65A BDX65B BDX65C VBE Base-Emitter Voltage (*) IC=5.0 A VCE=3V BDX65 - - 2.5 V BDX65A BDX65B BDX65C
BDX65 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 3 | 4 Symbol Ratings Test Condition(s) Min Typ Max Unit fhfe Cut-off frequency VCE=3 V IC=5 A BDX65 - 50 - kHz BDX65A BDX65B BDX65C fT Transition Frequency VCE=3 V IC=5 A f=1 MHz BDX65 - 7 - MHz BDX65A BDX65B BDX65C h FE D.C. current gain (*) VCE=3 V IC=1 A BDX65 - 3300 - BDX65A BDX65B BDX65C VCE=3 V IC=5 A BDX65 1000 - - BDX65A BDX65B BDX65C VCE=3 V IC=10 A BDX65 - 3700 - BDX65A BDX65B BDX65C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDX65 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 4 | 4 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector