BDX64C SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX64C

DESCRIPTION

  • With TO-3 package
  • DARLINGTON
  • Complement to type BDX65C

APPLICATIONS

  • Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION

1 Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current(peak) -16 A IB Base current -0.2 A PT Total power dissipation T C=25 117 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.5 /W Fig.1 simplified outline (TO-3) and symbol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX64C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-0.1A ; IB=0;L=25mH -120 V VCEsat Collector-emitter saturation voltage I C=-5A ;IB=-20mA -2 V VBE Base-emitter on voltage I C=-5A;VCE=-3V -2.5 V ICBO Collector cut-off current VCB=-120V; IE=0 TC=150 -0.2 -2 mA ICEO Collector cut-off current V CE=-60V; IB=0 -1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -5 mA VF Diode forward voltage I F=-5A -1.8 V hFE-1 DC current gain I C=-1A ; VCE=-3V 1500 hFE-2 DC current gain I C=-5A ; VCE=-3V 1000 hFE-3 DC current gain I C=-12A ; VCE=-3V 750 fT Transition frequency I C=-5A ; VCE=-3V;f=1MHz 7 MHz

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX64C PACKAGE OUTLINE Fig.2 Outline dimensions