BDX64_12 COMSET | Alldatasheet
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BDX64 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 PPNNPP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX64 -60 V BDX64A -80 BDX64B -100 BDX64C -120 VCEV Collector-EmitterVoltage V BE=-1.5 V BDX64 -60 V BDX64A -80 BDX64B -100 BDX64C -120 VEBO Emitter-Base Voltage -5.0 V IC Collector Current IC(RMS) -12 A ICM -16 IB Base Current 0.2 A PT Power Dissipation @ T C = 25° 117 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.5 °C/W
BDX64 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 2 | 4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A IB=0 L=25mH BDX64 -60 - - V BDX64A -80 - - BDX64B -100 - - BDX64C -120 - - ICEO Collector Cutoff Current VCE=-30 V BDX64 - - -1.0 mA VCE=-40 V BDX64A - - VCE=-50 V BDX64B - - VCE=-60 V BDX64C - - IEBO Emitter Cutoff Current V BE=-5 V BDX64 - - -5.0 mA BDX64A BDX64B BDX64C ICBO Collector-Base Cutoff Current VCBO=-60 V BDX64 - - 0.2 VCBO=-40 V TCASE=200°C - - 2 VCBO=-80 V BDX64A - - 0.2 VCBO=-50 V TCASE=200°C - - 2 VCBO=-100 V BDX64B - - 0.2 VCBO=-60 V TCASE=200°C - - 2 VCBO=-120 V BDX64C - - 0.2 VCBO=-70 V TCASE=200° - - 2 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A IB=-20 mA BDX64 - - -2 V BDX64A BDX64B BDX64C VF Forward Voltage (pulse method) IF=5 A BDX64 - 1.8 - V BDX64A BDX64B BDX64C VBE Base-Emitter Voltage (*) IC=-5.0 A VCE=-3V BDX64 - - -2.5 V BDX64A BDX64B BDX64C
BDX64 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 3 | 4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit Fhfe Cut-off frequency -VCE=3 V -IC=5 A BDX64 - 80 - kHz BDX64A BDX64B BDX64C fT Transition Frequency VCE=-3 V IC=-5 A f=1 MHz BDX64 - 7 - MHz BDX64A BDX64B BDX64C h FE D.C. current gain (*) CE=-3 V -IC=-1 A BDX64 - 1500 - BDX64A BDX64B BDX64C -VCE=-3 V -IC=-5 A BDX64 1000 - - BDX64A BDX64B BDX64C -VCE=-3 V -IC=-12 A BDX64 - 750 - BDX64A BDX64B BDX64C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDX64 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 4 | 4 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector