BDX63_12 COMSET | Alldatasheet
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BDX63 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX63 60 V BDX63A 80 BDX63B 100 BDX63C 120 VCEV Collector-EmitterVoltage V BE=-1.5 V BDX63 80 V BDX63A 100 BDX63B 120 BDX63C 140 VEBO Emitter-Base Voltage 5.0 V IC Collector Current IC(RMS) 8 A ICM 12 IB Base Current 0.15 A PT Power Dissipation @ T C = 25° 90 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W
BDX63 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 2 | 4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A IB=0 L=25mH BDX63 60 - - V BDX63A 80 - - BDX63B 100 - - BDX63C 120 - - ICEO Collector Cutoff Current VCE=30 V BDX63 - - 0.5 mA VCE=40 V BDX63A - - VCE=50 V BDX63B - - VCE=60 V BDX63C - - IEBO Emitter Cutoff Current V BE=5 V BDX63 - - 5.0 mA BDX63A BDX63B BDX63C ICBO Collector-Base Cutoff Current VCBO=60 V BDX63 - - 0.2 VCBO=400 V TCASE=200°C - - 2 VCBO=80 V BDX63A - - 0.2 VCBO=50 V TCASE=200°C - - 2 VCBO=100 V BDX63B - - 0.2 VCBO=60 V TCASE=200°C - - 2 VCBO=120 V BDX63C - - 0.2 VCBO=70 V TCASE=200° - - 2 VCE(SAT) Collector-Emitter saturation Voltage (*) I C=3.0 A IB=12 mA BDX63 - - 2 V BDX63A BDX63B BDX63C VF Forward Voltage (pulse method) IF=3 A BDX63 - 1.2 - V BDX63A BDX63B BDX63C VBE Base-Emitter Voltage (*) IC=3.0 A VCE=3V BDX63 - - 2.5 V BDX63A BDX63B BDX63C
BDX63 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 3 | 4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit Fhfe Cut-off frequency VCE=3 V IC=3 A BDX63 - 100 - kHz BDX63A BDX63B BDX63C fT Transition Frequency VCE=3 V, IC=3 A f=1 MHz BDX63 - 7 - MHz BDX63A BDX63B BDX63C h FE D.C. current gain (*) V CE=3 V IC=0.5 A BDX63 - 2500 - BDX63A BDX63B BDX63C VCE=3 V IC=3 A BDX63 1000 - - BDX63A BDX63B BDX63C VCE=3 V IC=8 A BDX63 - 2600 - BDX63A BDX63B BDX63C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDX63 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 4 | 4 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector