BDX62_12 COMSET | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
BDX62 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 1 | 4 PPNNPP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX63, BDX63A, BDX63B, BDX63C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage BDX62 -60 V BDX62A -80 BDX62B -100 BDX62C -120 VCEV Collector-EmitterVoltage V BE=-1.5 V BDX62 -60 V BDX62A -80 BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5.0 V IC Collector Current IC(RMS) -8 A ICM -12 IB Base Current -0.15 A PT Power Dissipation @ T C = 25° 90 W TJ Junction Temperature -55 to +200 °C TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.94 °C/W
BDX62 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 2 | 4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=-0.1 A IB=0 L=25mH BDX62 -60 - - V BDX62A -80 - - BDX62B -100 - - BDX62C -120 - - ICEO Collector Cutoff Current VCE=-30 V BDX62 - - -0.5 mA VCE=-40 V BDX62A - - VCE=-50 V BDX62B - - VCE=-60 V BDX62C - - IEBO Emitter Cutoff Current V BE=-5 V BDX62 - - -5.0 mA BDX62A BDX62B BDX62C ICBO Collector-Base Cutoff Current VCBO=-60 V BDX62 - - -0.2 VCBO=-40 V TCASE=200°C - - -2 VCBO=-80 V BDX62A - - -0.2 VCBO=-50 V TCASE=200°C - - -2 VCBO=-100 V BDX62B - - -0.2 VCBO=-60 V TCASE=200°C - - -2 VCBO=-120 V BDX62C - - -0.2 VCBO=-70 V TCASE=200° - - -2 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-3.0 A IB=-12 mA BDX62 - - -2 V BDX62A BDX62B BDX62C VF Forward Voltage (pulse method) IF=3 A BDX62 - - -2.5 V BDX62A BDX62B BDX62C VBE Base-Emitter Voltage (*) IC=-3.0 A VCE=-3V BDX62 - - - V BDX62A BDX62B BDX62C
BDX62 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 3 | 4 TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit fhfe Cut-off frequency VCE=3 V IC=3 A BDX62 - 100 - kHz BDX62A BDX62B BDX62C fT Transition Frequency VCE=-3 V, IC=-3 A f=1 MHz BDX62 - 7 - MHz BDX62A BDX62B BDX62C h FE D.C. current gain (*) V CE=-3 V, IC=-0.5 A BDX62 - 1500 - BDX62A BDX62B BDX62C VCE=-3 V, IC=-3 A BDX62 1000 - - BDX62A BDX62B BDX62C VCE=-3 V, IC=-8 A BDX62 - 750 - BDX62A BDX62B BDX62C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
BDX62 – A – B – C 24/10/2012 COMSET SEMICONDUCTORS 4 | 4 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does Comset Semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. Comset Semiconductors’ products are not au thorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector