BDX53A SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX53/A/B/C
DESCRIPTION
- With TO-220C package
- High DC current gain
- DARLINGTON
- Complement to type BDX54/A/B/C
APPLICATIONS
- Power linear and switching applications
- Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDX53 45 BDX53A 60 BDX53B 80 VCBO Collector-base voltage BDX53C Open emitter 100 V BDX53 45 BDX53A 60 BDX53B 80 VCEO Collector-emitter voltage BDX53C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A ICM Collector current-Pulse 12 A IB Base current 0.2 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 2.08 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX53/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX53 45 BDX53A 60 BDX53B 80 VCEO(SUS) Collector-emitter sustaining voltage BDX53C IC=0.1A, IB=0 100 V VCEsat Collector-emitter saturation voltage I C=3A ,IB=12mA 2.0 V VBE sat Base-emitter saturation voltage I C=3A ,IB=12mA 2.5 V BDX53 V CB=45V, IE=0 BDX53A V CB=60V, IE=0 BDX53B V CB=80V, IE=0 ICBO Collector cut-off current BDX53C V CB=100V, IE=0 0.2 mA BDX53 V CE=22V, IB=0 BDX53A V CE=30V, IB=0 BDX53B V CE=40V, IB=0 ICEO Collector cut-off current BDX53C V CE=50V, IB=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 2.0 mA hFE DC current gain I C=3A ; VCE=3V 750 VF-1 Forward diode voltage I F=3A 1.8 2.5 V VF-2 Forward diode voltage I F=8A 2.5 V
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX53/A/B/C PACKAGE OUTLINE Fig.2 Outline dimensions