BDX53 TEL | Alldatasheet
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BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS 53 53A 53B 53C 54 54A 54B 54C Collector-base voltage (open emitter) V CBO max. 45 60 80 100 V Collector-emitter voltage (open base) V CEO max. 45 60 80 100 V Collector current I C max. 8.0 A Total power dissipation up to TC = 25°C P tot max. 60 W Junction temperature T j max. 150 °C Collector-emitter saturation voltage IC = 3 A; I B = 12 mA V CEsat max. 2.0 V D.C. current gain IC = 3 A; V CE = 3 V h FE min. 750 RATINGS (at T A=25°C unless otherwise specified) Limiting values 53 53A 53B 53C 54 54A 54B 54C Collector-base voltage (open emitter) V CBO max. 45 60 80 100 V Collector-emitter voltage (open base) V CEO max. 45 60 80 100 V Emitter-base voltage (open collector) V EBO max. 5.0 V BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR B 1 23 J MG D H A OO K N L F E C DIM MIN. MAX. All diminsions in mm. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0 . 9 0 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J0 . 5 6 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 OD E G 7 2 3 TO-220 Plastic Package Transys Electronics LI M ITE D
Collector current I C max. 8.0 A Collector current (Peak value) I CM max. 12 A Base current I B max. 0.2 A Total power dissipation upto T C=25°C P tot max. 60 W Derate above 25°C max. 0.48 W/°C Junction temperature T j max. 150 °C Storage temperature T stg –65 to +150 ºC THERMAL RESISTANCE From junction to case R th j–c 2.08 ° C/W From junction to ambient R th j–a 7.0 ° C/W CHARACTERISTICS T amb = 25°C unless otherwise specified 53 53A 53B 53C 54 54A 54B 54C Collector cutoff current IB = 0; V CB = 45 V I CBO max. 0.2 – – – mA IB = 0; V CB = 60 V I CBO max. – 0.2 – – mA IB = 0; V CB = 80 V I CBO max. – – 0.2 – mA IB = 0; V CB = 100 V I CBO max. – – – 0.2 mA IB = 0; V CE = 22 V I CEO max. 0.5 – – – mA IB = 0; V CE = 30 V I CEO max. – 0.5 – – mA IB = 0; V CE = 40 V I CEO max. – – 0.5 – mA IB = 0; V CE = 50 V I CEO max. – – – 0.5 mA Emitter cut-off current IC = 0; V EB = 5 V I EBO max. 2.0 mA Breakdown voltages IC = 100 mA; I B = 0 V CEO(sus)* min. 45 60 80 100 V IC = 1 mA; I E = 0 V CBO min. 45 60 80 100 V IE = 1 mA; I C = 0 V EBO min. 5.0 V Saturation voltages IC = 3 A; I B = 12 mA V CEsat* max. 2.0 V VBEsat* max. 2.5 V D.C. current gain IC = 3 A; V CE = 3 V h FE* min. 750 Small signal current gain IC = 3 A; V CE = 4 V; f = 1.0 MHz |h fe| min. 4.0 Output capacitance f = 1.0 MHz IE = 0; V CB = 10 V NPN Co max. 300 pF PNP Co max. 200 pF Parallel-diode forward voltage IF = 3 A V F max. 2.5 V IF = 8 A V F typ. 2.5 V * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2% BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C